Investigation of low temperature cathodoluminescence mechanism of Er doped GaN t

Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1×1013, 1×1014, 1×1015, and 5×1015 atom/cm2, respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge lumine