Short wave infrared detector with double barrier structure and low dark current

Short-wave infrared (SWIR) detectors combining AlAs/In0.53Ga0.47As/AlAs double barrier structure (DBS) with In0.53Ga0.47As absorption layer are fabricated by molecular beam epitaxy. By adding a p-charge layer, the dark current density of the detector is lowered by 3 orders of magnitude. The responsi