InGaAs/InAlAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for Ultra Wideb

An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is expected to show very large electrorefractive index change . n in a wideband transparency region. Band structures of the FACQW are analyzed with Luttinger-Kohn Hamiltonian. The electrorefractive characteristics of the FACQW are d