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In situ fabrication of PtSe2/GaN heterojunction for self powered deep ultraviole

上传者: 2021-02-08 14:22:55上传 PDF文件 1.37MB 热度 6次
In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity
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