High performance AlGaInP light emitting diodes integrated on silicon through a s

High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer