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Absorption and emission modulation in a MoS

上传者: 2021-01-31 20:42:48上传 PDF文件 1.56MB 热度 15次
Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMDs) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light absorbers and emitters due to their close proximity in the lattice constants. The surface properties o
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