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S5P4418的datasheet

上传者: 2020-07-27 12:26:24上传 PDF文件 12.75MB 热度 26次
Samsung Confidential Trademarks All brand names, trademarks and registered trademarks belong to their respective owners Exynos, Exynos 5410, FlexOneNAND, and OneNAND are trademarks of Samsung Electronics ARM, Jazelle, TrustZone, and Thumb are registered trademarks of ARM Limited. Cortex, ETM, ETB Coresight, ISA, and Neon are trademarks of ARM Limited Java is a trademark of Sun Microsystems, Inc SD is a registered trademark of Toshiba Corporation MMC and emmc are trademarks of multi media card association JtAG is a registered trademark of JTAG Technologies, Inc Synopsys is a registered trademark of Synopsys, Inc 12S is a trademark of phillips electronics IC is a trademark of Phillips semiconductor Corp MIPI and slimbus are registered trademarks of the Mobile Industry Processor Interface(MIPI)Alliance All other trademarks used in this publication are the property of their respective owners SAMSUNG Confidential cn/ louishan at 2015.01.13 SAMSUNG ELECTRONICS AMSUN Samsung Confidential Chip handling Guide Precaution against Electrostatic Discharge When using semiconductor devices, ensure that the environment is protected against static electricity 1. Wear antistatic clothes and use earth band 2. All objects that are in direct contact with devices must be made up of materials that do not produce static electricity 3. Ensure that the equipment and work table are earthed 4. Use ionizer to remove electron charge Contamination Do not use semiconductor products in an environment exposed to dust or dirt adhesion Temperature/Humidity Semiconductor devices are sensitive to · Environment · Temperature Humidit High temperature or humidity deteriorates the characteristics of semiconductor devices. Therefore, do not store or use semiconductor devices in such conditions cn/ louishan at 2015.01.13 Mechanical shock Do not to apply excessive mechanical shock or force on semiconductor devices Chemical Do not expose semiconductor devices to chemicals because exposure to chemicals leads to reactions that deteriorate the characteristics of the devices Light Protection In non-Epoxy Molding Compound(EMC) package, do not expose semiconductor IC to bright light Exposure to bright light causes malfunctioning of the devices. However, a few special products that utilize light or with security functions are exempted from this guide. Radioactive, Cosmic and X-ray Radioactive substances, cosmic ray, or X-ray may influence semiconductor devices. These substances or rays may cause a soft error during a device operation. Therefore, ensure to shield the semiconductor devices under environment that may be exposed to radioactive substances, cosmic ray, or X-ray EMS (Electromagnetic Susceptibility) Strong electromagnetic wave or magnetic field may affect the characteristic of semiconductor devices during the operation under insufficient PCB circuit design for Electromagnetic Susceptibility(EMs) SAMSUNG ELECTRONICS AMSUN Samsung Confidential Revision History Revision no Date Description Author(s) 0.00 Oct01,2014. First draft Chongkun Lee 0.10 Oct.22.2014 2nd draft Chongkun Lee SAMSUNG Confidential cn/ louishan at 2015.01.13 SAMSUNG ELECTRONICS AMSUN Samsung Confidential Table of contents 1 PRODUCT OVERVIEW ■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■ 1.1 Introduction 1.2 Features 13 Block Diagran……… 11,,日 1画 1. 4 Brief Functional Specification 1-4 1.4.1cPU …1-4 1.4.2 Clock &Power Management 1.4.3DMA 1.4.4 Interrupt Controller 1.4.5 Timer& Watchdog Timer 15 1.4.6RTC 1.4.7 Memory Controller 1. 4. 8 GPIO Controller 1-5 4.9 Ethernet mAc Controller 1.4.10 SD/MMC Controller 1.4.11PPM …1-7 1.4.12PWM 1-7 1.4.13ADC 1.4.14|2C 14.15 SPI/SSP 1-8 4.16 MPEG-TS 1-9 1. 4.17 aRT& iso7816 Sim Card Interface 19 1.4.18UsB 面,画 ∴1-10 1.4.192S. 1-11 14.20AC97 1.4.21 SPDIF TX RX 1-11 1.4.22PDM 1-12 1.4.23 Display Controller 1-12 14.24 Video post processor 1-13 1. 4.25 Video Input Processor .1-14 14.26 Multi Format mPeg codec 1-14 1.4.27 3D Graphic Controller 1-15 4.28 Security IP 1-16 1.4.29 Unique Chip ID 1-17 1.4.30 Operating Conditions 1.4.31 Package 1-17 2 MECHANICAL DIMENSION AND I/O PIN DESCRIPTION 2-1 2.1 Mechanical Dimension 2-1 2.2 FCBGA Ball Map.…… 2-3 2. 3 /0 Function Description ...... 2-8 23. 1 Ball list table .:.::::: 2-8 2.3.2 Ball List Table: Sorted by Function 2-24 3 SYSTEM BOOT wRRERRRRRERRRSRRRRRRRaRRISRnRRRRRESRSRIRIRRRRRIaIRRRNe 3. 1 Overview 3.2 Functional Description 3-2 SAMSUNG ELECTRONICS SAMSUNG Samsung Confidential 3.2. 1 System Configuration....... 3-2 3.3 External Static Memory Boot 3.3.1 External Static Memory Boot Features 3.3.2 External Static Memory Boot System Configuration 3-6 3.3.3 EXternal Static Memory Boot Operation 3-6 3. 4 Internal rom boot 3-7 3. 4.1 Features 3.4.2 System Configuration for the Internal ROM booting 3.4 3 USB BOOT 3-8 3.4.4 SDHCBOOT 3-11 3.4.5 NANDBOOT With error correction 3-13 3.4.6 Additional information 3-16 4 SYSTEM CONTROL 4.1 Overview 4-1 4.2 Features 4-1 4.3 Block Diagram 4-2 4.4 Functional Description....... 4-3 4.4.1 PLL(Phase Locked Loop 4-3 4.4.2 Change PLL Value 4-9 4 4.3 Clock Generator 4-10 4.5 Power manager 4-15 4.5.1 Power Manager Overview 4-15 4.5.2 Power Down Mode Operation 4-16 4.6 Reset Generation 4-21 4.6.1 Power on Reset Sequence 4-21 4.6.2 Sleep Mode Wakeup Sequence 4-22 4.6.3 Power off Sequence 4-23 4.6.4 Software Reset and GPIO Reset 4-24 4.6.5 Watchdog Reset 4-24 4.7 Tie off 4.8 AXI BUS 4-25 4.8. 1 Programmable Quality of Service(ProgQos) 4-25 4.8.2 Arbitration scheme 4-26 4.9 Register Description 4-28 49.1 Register Map Summary…… .4-28 5 CLOCK GENERATOR ■■ 5-1 5.1 P Clock Generator Overview 5.1.1 Clock Generator Level o 5.1.2 Clock Generator level 1 5.1.3 Clock Generator Level 2 5-18 6 SYSTEM L2 CACHE(PL310L2C)…… 6-1 6.1 Overview 国 6-1 6.2 Features .6-2 6. 3 Block Diagram 6-3 6.4 Functional Description …6-4 6.4.1 L2 Cache User Configure …6-4 6. 4.2 Initialization Sequence 6- 6.5 Register Description 6-5 SAMSUNG ELECTRONICS SAMSUNG Samsung Confidential 7 SECURE JTAG ■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■ 7-1 7.1 Overview 7-1 7.2 Features 7.3 Block Diagram 7-2 7.4 Secure JTAG User Configure 8 DMA 8-1 8.1 Overview 8.2 Features 8-2 8.3 block Diagram 111a 8-3 8.4 Functional Description 8-4 8. 4. 1 Software Considerations 8-4 8.4.2 Programmer's Model 8 8.5 Register Description 8-22 8.5. 1 Register Map Summary 8-22 9 INTERRUPT CONTROLLER ■■■■■■■■量■■■I 9-1 9.1 Overview 9-1 9.2 Features 1· ..::: 9.3 Block Diagram 9.4 Programming sequence .9-3 9.4.1 Interrupt Flow Sequence Using AHB 9-3 9.4.2 FlQ Interrupt Flow Sequence 9-3 9.4.3 Internal gic 9-3 9.5 Interrupt Source 9.6 Internal gic interrupt Source 9.7 Register Summary… ………… .9-7 10 WATCH DOG TIMER 10-1 10.1 Overview 10-1 10.2 Features ……10-1 10.3 Functional Description ,10-2 10.3.1 Watchdog Timer Operation…… 10-2 103.2 wtdat Wtcnt 着1画 10-3 10.3.3 Consideration of Debugging Environment 10-3 10.3. 4 Special Function Register. 10-3 10.4 Register Description 10-4 10.4.1 Register Map Summary 10-4 11RTC∴…… 11-1 11.1 Overview 11-1 11.2 Features 11-1 11.3 Block Diagram.… 11-2 11.4 Functional Description 11.4.1 Backup Battery Operation 11-3 11.4.2 RTC Operation 11-3 11.4.3 Accessing the RtC Time Counter Setting/Read Register .11-4 11.4.4 nterrupt Pending Register..,…,…,… 11-4 11.4.5 Power Manager Reset Time Control 11-4 11.5 Register Description 11-5 SAMSUNG ELECTRONICS SAMSUNG Samsung Confidential 11.5.1 Register Map description 11-5 12 ALIVE 12-1 12.1 Overview ∴12-1 12.2 Features 8面面B11面国面国面 11画 12-1 12.3 Power isolation 12-2 12.3.1 Core power c仟f 12-2 2.3.2 Power Gating 12-2 12. 4 Alive Registers 12-3 12.4.1 Alive GPIO Detect Registers 12-3 12.4.2 Scratch Register 12-4 12.4.3 Alive GPIO Control Registers 12-4 12.5 Momentary Power Control .. 12-5 12.5.1 CoreVDD Powering On 12.52 CoreVDD Powering……… 12-5 12-5 12.6 SLEEP Mode 12-6 12.7 PMU (Power management Unit) 12-7 12.7.1○ verviev 12-7 12.7.2 Power mode table 127 12.7.3 Power Switch Control Sequence 12-7 12.8 Register Description .12-8 12.8.1 Register Map Summary 12-8 13|DREG|sTER∴ 日■ 13-1 13. Overview 13-1 13.2 Features 13.3 Functional Description 13-2 13.3.1 AC Timing 13-2 13.3.2 Sense Mode Timing 13-3 13.3.3 Scan-latch Mode timing 13.3. 4 Stand-by Mode Timing 13-4 13.3.5 Program Mode Timing…… 13-5 13.4 Register Description 13-6 134.1 Register Map Summary………………… 13-6 13.5 Application Notes 13-14 14 MEMORY CONTROLLER ■■■■日口■■■■■■■■■■■■口■■■■口■■口■口■■■口■圆■■■■■■■■■■■■■ 14-1 14.oVerview 14-1 14.1.1 Unified Memory Architecture(UMA) 14-1 14.2 Block diagram ∴14-2 14.3 Functional Description 14-3 14.3.1 MCU-A Bank Feature 14-3 143.2 MCU-S Bank Feature 14-4 14.3.3 Memory Map 14-5 14.3.4 MCU-A Address Mapping 国 14-6 14.3.5 Low Power Operation 14-7 14.3.6 MCU-A APPLICATION NOTE 14-8 14.3.7 DLL Lock and zQ l/o Calibration 4-23 14.3.8 NAND Overview 14-26 14.4 Register Description 14-27 14.4.1 Register Map Summary 14-27 SAMSUNG ELECTRONICS SAMSUNG Samsung Confidential 15 GPIO CONTROLLER ■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■n■■■■■■■■■■ 15-1 15. 1 Overview 15-1 15.1.1 Features 15 15.2 Block Diagram 15-2 15.3 Functional Description 15-3 15.3.1 Input Operation 15-3 15.3.2 Output Operation 15-4 15.3.3 Alternate Function Operation 15-4 15.4 Register Description 15-5 15.4.1 Register Map Summary 16 ETHERNET MAC ■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■a■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■ 16-1 16.1 Overview I4..888.B 16-1 16.1.1 MAC Core Features 16-1 16.1.2dMA Block Features 16-2 16.2 Block Diagram 16.3 Register Description 16-5 16.3. 1 Register Map Summary. 16-5 17 SD/MMC CONTROLLER 17-1 17.1 17.1.1 Features 17-1 17.2 Block Diagram 17-2 7.3 Register Description 17-4 17.3.1 Register Map Summary 17-4 18 PULSE PER| OD MEASUREMENT(PPM),……,,…,…,…181 18.1 Overview 18-1 18.1.1 Features 18-1 18.1.2 Block Diagram 18-1 18.2 Functional Description 18-2 18.2.1 IR Remote Protocol Example 18-2 18.2.2 Timing 18.2.3 Flowchart 着1画 .18-4 18.3 Register Description 18-5 18.3. 1 Register Map Summary 18-5 19 PULSE WIDTH MODULATION (PWM) TIMER 19-1 19.1。 verview 19-1 19.2 Features 19-3 19. 3 Block Diagram 19-4 19.4 Functional Description 19-7 19. 4. 1 Prescaler Divider 19-7 19.4.2 Basic Timer Operation 19-7 19.4.3 Auto-Reload and Double Buffering 19-8 19.4.4 Initialize Timer(Setting Manual-Up Data and Inverter) 19-10 19.4.5 Output Level Control 19-11 19.46 Dead zone generator 19-12 19.4.7 Timer Interrupt Generation... 19-12 19.5 Register Description 19-13 SAMSUNG ELECTRONICS SAMSUNG
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