Realization of room temperature electroluminescence from the heterojunction devi

MOCVD技术生长n-ZnO/p-GaN异质结构发光器件室温电注入发光性能研究，杨天鹏，朱惠超，The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojun