内存 K4S161622
内存K4S161622.pdfK4S161622ECMOSSDRAMRev1.1Jan'03TheK4S161622Eis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsare
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