RfAndMicrowavePowerAmplifierDesign

Rf And Microwave Power Amplifier DesignThe McGrawHill companiesLibrary of Congress Cataloging-in-Publication DataGrebennikov. Andrei dateRF and microwave power amplifier design Andrei Grebennikov.cmIncludes bibliographical references and indexISBN 0-07-144493-9(alk. paper,1. Power amplifiers. 2. Microwave amplifiers. I. TitleTK7871.58P6G722004621.395-dc222004057908Copyright c 2005 by The McGraw-Hill Companies, Inc. All rights re-served. Printed in the United States of America. Except as permittedunder the United States Copyright Act of 1976, no part of this publi-cation may be reproduced or distributed in any form or by any meansor stored in a data base or retrieval system, without the prior writtenpermission of the publisher1234567890DOC/DOC010987654SBN0-07-144493-9The sponsoring editor for this book was Stephen S. Chapman and the pro-duction supervisor was Sherri Souffrance. It was set in Century School-book by International Typesetting and Composition. The art director forthe cover was handel louPrinted and bound by RR donnelleyMcGraw-Hill books are available at special quantity discounts to use aspremiums and sales promotions, or for use in corporate training programs. For more information, please write to the Director of SpecialSales. McGraw-Hill Professional. two penn plaza. New York. NY101212298 Or contact your local bookstoreThis book is printed on recycled, acid-free papercontaining a minimum of 50%o recycled, de-inkedfiberInformation contained in this work has been obtained by TheMcGraw-Hill Companies, Inc(McGraw-Hill) from sourcesbelieved to be reliable. However. neither mcgraw-Hill nor itsauthors guarantee the accuracy or completeness of any information published herein, and neither McGraw-Hill nor its authorsshall be responsible for any errors, omissions, or damages arising out of use of this information. This work is published withthe understanding that McGraw-Hill and its authors are supplying information but are not attempting to render engineer-ing or other professional services. If such services are requiredthe assistance of an appropriate professional should be soughtTThe main objective of this book is to present all the relevant informa-tion required for RF and micro-wave power amplifier design includingwell-known and novel theoretical approaches and practical design techniques as well as to suggest optimum design approaches effectively combining analytical calculations and computer-aided design. This bookcan also be very useful for lecturing to promote the analytical way ofthinking with practical verification by making a bridge between theoryand practice of rf and microwave engineering. As it often happens, anew result is the well-forgotten old one. Therefore, the demonstrationof not only new results based on new technologies or circuit schematicsis given, but some sufficiently old ideas or approaches are also introduced, that could be very useful in modern practice or could contributeto appearance of new ideas or schematic techniquesas a result, this book is intended for and can be recommended toa University-level professors and scientists, as possible reference andwell-founded material for creative research and teaching activitythat will contribute to strong background for graduate and postgrad-uate studentr&d staff, to combine the theoretical analysis and practical aspectincluding computer-aided design and to provide a sufficient basis fornew ideas in theory and practical circuit techniquePracticing RF designers and engineers, as an anthology of many well-known and new practical RF and microwave power amplifier circuitswith detailed description of their operational principles and applications and clear practical demonstration of theoretical resultsIn Chapter 1, the two-port networks are introduced to describe thebehavior of linear and nonlinear circuits. To characterize the nonlin-ear properties of the bipolar or field-effect transistors, their equivalentcircuit elements are expressed through the impedance Z-parametersadmittance Y-parameters, or hybrid H-parameters. On the other handthe transmission ABCD-parameters are very important in the designof the distributed circuits as a transmission line or cascaded elementswhereas the scattering S-parameters are widely used to simplify a measurement procedure.The main purpose of Chapter 2 is to present widely used nonlinear cir-cuit design techniques to analyze nonlinear power amplifier circuits. Ingeneral, there are several approaches to analyze and design these nonlinear circuits, depending on their main specifications--for examplean analysis in time domain when it is necessary to determine the transient circuit behavior or in frequency domain to provide improvement ofche power and spectral performances when both parasitic effects suchas instability and spurious effects must be eliminated or minimizedUsing the time-domain technique it is quite easy to describe the circuitby differential equations, whereas frequency-domain analysis is moreexplicit when a relatively complex circuit can be reduced to one or moresets of immitance at each harmonic componentIn Chapter 3, all the necessary steps to provide an accurate devicemodeling procedure starting with the determination of the small-signalequivalent circuit parameters are described and discussed. a varietyof nonlinear models for MOSFET, MESFET, HEMT, and bipolar devices including HBTs, which are very prospective for modern microwavemonolithic integrated circuits of power amplifiers and oscillators, arepresented. In order to highlight the advantages or draw backs of onenonlinear device model over the other, a comparison of the measuredand modeled volt-ampere and voltage-capacitance characteristics or afrequency range of model application is madeA concept of impedance matching and the impedance-matching technique, which is very important when designing power amplifiers, ispresented in Chapter 4. First, the main principles and impedancematching tools such as the Smith chart are described, giving the starting point of the matching-design procedure. As an engineering solutionin general depends on the different circuit requirements, the designershould choose the optimum solution among a variety of the matchingnetworks including either lumped elements or transmission lines orboth of them. To simplify and visualize the matching-design procedurean analytical approach, which allows calculating the parameters of thematching circuits using simple equations, and Smith chart traces isdiscussed and illustrated with several examples of the narrowbandand broadband RF and microwave power amplifiers using bipolar orMOSFET devices. Finally, the design formulas and curves are presentedfor different types of transmission lines including stripline, microstripine, Slotline, and coplanar waveguideChapter 5 describes the basic properties of three-port and four-portnetworks as well as a variety of different combiners, transformers, anddirectional couplers for RF and microwave power applications. So, forpower combining in view of insufficient power performance of the ac-tive devices. it is best to use the coaxial cable combiners with ferritecore to combine the output powers of rf power amplifiers intended forwideband applications. As the device output impedance for high powerlevels is usually too small, to match this impedance with a standard50-Q2 load, it is necessary to use the co-axial line transformers withspecified impedance transformation For narrow band applications, theN-way Wilkinson combiners are widely used due to the simplicity oftheir practical realization. At the same time in microwaves, the size ofthe combiners should be very small. Therefore, the commonly used hy-brid microstrip combiners including different types of microwave hybridand directional couplers are described and analyzedChapter 6 represents the fundamentals of the power amplifier design, which is generally a complicated procedure when it is necessaryto provide simultaneously accurate active device modeling, effectiveimpedance matching depending on the technical requirements and op-eration conditions, stability in operation, and ease in practical imple-mentation. Therefore, at the beginning of the chapter the key definitions of different power gains and stability are introduced. For a stableoperation mode of the power amplifier, it is necessary to evaluate theoperating frequency domains where the active device may be potentially unstable. To avoid parasitic oscillations, the stabilization circuittechnique for different frequency domains from low frequencies to highfrequencies close to the device transition frequency is analyzed and discussed. One of the key parameters of the power amplifier is its linearity,which is very important for many TV and cellular applications. Therefore, the relationships between the output power, 1-dB gain compression point, third-order intercept point, and intermodulation distortionsof the third and higher orders are given and illustrated for differentactive devices. The basic classes of the power amplifier operation AAB, B, and C are introduced, analyzed, and illustrated. The device bi-asing conditions and examples of bias circuits for MOSFET and bipolardevices to improve linearity or to increase efficiency are shown and discussed. Also the concept of push-pull amplifiers and their circuit designusing balanced transistors is given. In the final section, the numerouspractical examples of power amplifiers using MOSFET, MESFET, andbipolar devices in different frequency ranges and for output powers areshown and discussedModern commercial and military communication systems requirehigh-efficiency long-term operating conditions. Chapter 7 describes indetail the possible circuit solutions to provide a high-efficiency poweramplifier operation based on using different overdriven(Class b, Class Fand Class E) classes of operation or newly developed subclasses