Analog VLSI: Circuits and Principles (English Edition)
An excellent book for state-of-art analog VLSI design technology. Recommended for those who are interested in the coming revolution of digital-analog hybrid circuits design and neuromorphic engineering technology. Content Authors and Contributors xiii Acknowledgments xv Preface xvii Foreword xix 1 Introduction I SILICON AND TRA NSISTORS 2 Semiconductor Device Physics 2.1 Crystal Structure 2.2 Energy Band Diagrams 2.3 Carrier Concentrations at Thermal Equilibrium 2.4 Impurity Doping 2.5 Current Densities 2.6 p-n Junction Diode 2.7 The Metal-Insulator-Semiconductor Structure 3 MOSFET Characteristics 3.1 MOSFET Structure 3.2 Current–Voltage Characteristics of an nFET 3.3 Current–Voltage Characteristics of a pFET 3.4 Small-Signal Model at Low Frequencies 3.5 Second-Order Effects 3.6 Noise and Transistor Matching 3.7 Appendices 4 Floating-Gate MOSFETs 4.1 Floating-Gate MOSFETs 4.2 Synapse Transistors 4.3 Silicon Learning Arrays 4.4 Appendices II STATICS 5 Basic Static Circuits - J¨org Kramer 5.1 Single-Transistor Circuits 5.2 Two-Transistor Circuits 5.3 Differential Pair and Transconductance Amplifier 5.4 Unity-Gain Follower 6 Current-Mode Circuits 6.1 The Current Conveyor 6.2 The Current Normalizer 6.3 Winner-Take-All Circuits 6.4 Resistive Networks 6.5 Current Correlator and Bump Circuit 7 Analysis and Synthesis of Static Translinear Circuits 7.1 The Ideal Translinear Element 7.2 Translinear Signal Representations 7.3 The Translinear Principle 7.4 ABC’s of Translinear-Loop–Circuit Synthesis 7.5 The Multiple-Input Translinear Element 7.6 Multiple-Input Translinear Element Networks 7.7 Analysis of MITE Networks 7.8 ABC’s of MITE-Network Synthesis III DYNAMICS 8 Linear Systems Theory - Giacomo Indiveri 8.1 Linear Shift-Invariant Systems 8.2 Convolution 8.3 Impulses 8.4 Impulse Response of a System 8.5 Resistor-Capacitor Circuits 8.6 Higher Order Equations 8.7 The Heaviside-Laplace Transform 8.8 Linear System’s Transfer Function 8.9 The Resistor-Capacitor Circuit (A Second Look) 8.10 Low-Pass, High-Pass, and Band-Pass Filters 9 Integrator-Differentiator Circuits 9.1 The Follower-Integrator 9.2 The Current-Mirror Integrator 9.3 The Capacitor 9.4 The Follower-Differentiator Circuit 9.5 The diff1 and diff2 Circuits 9.6 Hysteretic Differentiators 10 Photosensors 10.1 Photodiode 10.2 Phototransistor 10.3 Photogate 10.4 Logarithmic Photosensors 10.5 Imaging Arrays 10.6 Limitations Imposed by Dark Current on Photosensing IV SPECIAL TOPICS 11 Noise in MOS Transistors and Resistors 11.1 Noise Definition 11.2 Noise in Subthreshold MOSFETs 11.3 Shot Noise versus Thermal Noise 11.4 The Equipartition Theorem and Noise Calculations 11.5 Noise Examples 12 Layout Masks and Design Techniques 12.1 Mask Layout for CMOS Fabrication 12.2 Layout Techniques for Better Performance 12.3 Short List of Matching Techniques 12.4 Parasitic Effects 12.5 Latchup 12.6 Substrate Coupling 12.7 Device Matching Measurements 13 A Millennium Silicon Process Technology 13.1 A typical 0.25 m CMOS Process Flow 13.2 Scaling Limits for Conventional Planar CMOS Architectures 13.3 Conclusions and Guidelines for New Generations 14 Scaling of MOS Technology to Submicrometer Feature Sizes 14.1 Scaling Approach 14.2 Threshold Scaling 14.3 Device Characteristics 14.4 System Properties 14.5 Conclusions Appendix A: Units and symbols References Index NSISTORS 2 Semiconductor Device Physics 2.1 Crystal Structure 2.2 Energy Band Diagrams 2.3 Carrier Concentrations at Thermal Equilibrium 2.4 Impurity Doping 2.5 Current Densities 2.6 p-n Junction Diode 2.7 The Metal-Insulator-Semiconductor Structure 3 MOSFET Characteristics 3.1 MOSFET Structure 3.2 Current–Voltage Characteristics of an nFET 3.3 Current–Voltage Characteristics of a pFET 3.4 Small-Signal Model at Low Frequencies 3.5 Second-Order Effects 3.6 Noise and Transistor Matching 3.7 Appendices 4 Floating-Gate MOSFETs 4.1 Floating-Gate MOSFETs 4.2 Synapse Transistors 4.3 Silicon Learning Arrays 4.4 Appendices II STATICS 5 Basic Static Circuits - J¨org Kramer 5.1 Single-Transistor Circuits 5.2 Two-Transistor Circuits 5.3 Differential Pair and Transconductance Amplifier 5.4 Unity-Gain Follower 6 Current-Mode Circuits 6.1 The Current Conveyor 6.2 The Current Normalizer 6.3 Winner-Take-All Circuits 6.4 Resistive Networks 6.5 Current Correlator and Bump Circuit 7 Analysis and Synthesis of Static Translinear Circuits 7.1 The Ideal Translinear Element 7.2 Translinear Signal Representations 7.3 The Translinear Principle 7.4 ABC’s of Translinear-Loop–Circuit Synthesis 7.5 The Multiple-Input Translinear Element 7.6 Multiple-Input Translinear Element Networks 7.7 Analysis of MITE Networks 7.8 ABC’s of MITE-Network Synthesis III DYNAMICS 8 Linear Systems Theory - Giacomo Indiveri 8.1 Linear Shift-Invariant Systems 8.2 Convolution 8.3 Impulses 8.4 Impulse Response of a System 8.5 Resistor-Capacitor Circuits 8.6 Higher Order Equations 8.7 The Heaviside-Laplace Transform 8.8 Linear System’s Transfer Function 8.9 The Resistor-Capacitor Circuit (A Second Look) 8.10 Low-Pass, High-Pass, and Band-Pass Filters 9 Integrator-Differentiator Circuits 9.1 The Follower-Integrator 9.2 The Current-Mirror Integrator 9.3 The Capacitor 9.4 The Follower-Differentiator Circuit 9.5 The diff1 and diff2 Circuits 9.6 Hysteretic Differentiators 10 Photosensors 10.1 Photodiode 10.2 Phototransistor 10.3 Photogate 10.4 Logarithmic Photosensors 10.5 Imaging Arrays 10.6 Limitations Imposed by Dark Current on Photosensing IV SPECIAL TOPICS 11 Noise in MOS Transistors and Resistors 11.1 Noise Definition 11.2 Noise in Subthreshold MOSFETs 11.3 Shot Noise versus Thermal Noise 11.4 The Equipartition Theorem and Noise Calculations 11.5 Noise Examples 12 Layout Masks and Design Techniques 12.1 Mask Layout for CMOS Fabrication 12.2 Layout Techniques for Better Performance 12.3 Short List of Matching Techniques 12.4 Parasitic Effects 12.5 Latchup 12.6 Substrate Coupling 12.7 Device Matching Measurements 13 A Millennium Silicon Process Technology 13.1 A typical 0.25 m CMOS Process Flow 13.2 Scaling Limits for Conventional Planar CMOS Architectures 13.3 Conclusions and Guidelines for New Generations 14 Scaling of MOS Technology to Submicrometer Feature Sizes 14.1 Scaling Approach 14.2 Threshold Scaling 14.3 Device Characteristics 14.4 System Properties 14.5 Conclusions Appendix A: Units and symbols References Index
用户评论
VLSI 角度的一本模电书 还是不错的。。我觉得角度很独特。当然模电的论述不是很经典。
good ,very good,thank you!